Method of making emitter regions by implantation through a non-m

Details Method of making emitter regions by implantation through a non-m Method of making emitter regions by implantation through a non-m

1981-03-12

1984-06-05

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 357 34, 357 59, 357 91, H01L 21265, H01L 21225

Patent

active

044526458

ABSTRACT:
A transistor structure is provided with an emitter which is formed from non-monocrystalline silicon which is caused to be converted to monocrystalline silicon during the manufacture of the transistor. In the process of manufacturing the present semiconductor structure, a subcollector is formed in a semiconductor substrate. The subcollector dopant out diffuses into a subsequently deposited epitaxial layer. A base region is formed in the epitaxial layer of a conductivity type opposite that of the conductivity type of the subcollector. This results in a PN junction between the base region and the out diffused subcollector impurities forming the collector of the transistor.
A layer of non-monocrystalline silicon is deposited on the epitaxial layer. At least a portion of the non-monocrystalline silicon forms a precursor for an emitter region which is contiguous to but vertically displaced from the surface of the base region. The emitter precursor is then bombarded with ions of a conductivity type that is the same as the conductivity type of the subcollector. The ion bombardment is at a dose and energy level sufficient to displace a portion of the Gaussian distribution of the ions across the interface between the non-monocrystalline layer and the epitaxial layer and into the base region. Thereafter, the structure is annealed by suitable means to drive a portion of the ions deeper into the base region and to convert the non-monocrystalline silicon of the emitter precursor into a monocrystalline emitter region.

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