Semiconductor memory device for storing image data

Details Semiconductor memory device for storing image data Semiconductor memory device for storing image data

1986-03-21

1990-01-09

Gossage, Glenn A.

Static information storage and retrieval

Floating gate

Particular biasing

357 235, 357 30, 365114, 365215, G11C 1140, H01L 2978

Patent

active

048932736

ABSTRACT:
A first insulating film of a light-transmitting material is formed on a channel region between the source and drain regions on a semiconductor substrate. A floating gate electrode is formed on the first insulating film. A second insulating film is formed on the floating gate electrode. A control gate electrode is formed on the second insulating film. An opening is formed to extend through the control gate electrode, the second insulating film, and the floating gate electrode. The opening is filled with a light-transmitting material. Light incident on the memory cell is guided by the material onto the channel region. When light becomes incident on the channel region while predetermined voltages are applied to the control gate electrode and across the source and drain regions, electron-hole pairs corresponding to the amount of light incident on the memory cell are generated in the channel region, and the electrons are trapped in the floating gate electrode. The threshold value of the memory cell is changed in accordance with the amount of electrons trapped in the floating gate electrode. The memory cell stores digital data in accordance with the change in threshold value, i.e., corresponding to the amount of light incident thereon. When a plurality of memory cells are arranged in a matrix, image data can be two-dimensionally input and stored in the array.

REFERENCES:
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patent: 4366555 (1982-12-01), Hu
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patent: 4754320 (1988-06-01), Mizutani et al.
Drangeid, "High Speed Field Effect Structure", IBM Tech. Disc. Bull., vol. 11, No. 3, Aug. 1968, pp. 332-333.
Yoshikawa et al., "Technology Requirements for Mega Bit CMOS EPROMS", Proceedings of the IEEE International Devices Meeting, p. 456-459, Dec. 9-12, 1984.
Fukuzaki et al., "Image Sensor Incorporating an MNOS Type Involatile Memory", Preparing of 1985 National Meeting of Television Society, p. 77, 1985.

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