Power sensor for RF power measurements

Details Power sensor for RF power measurements Power sensor for RF power measurements

1988-02-19

1988-12-06

Eisenzopf, Reinhard J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With waveguide or long line

324106, 357 28, G01R 2102, G01R 2100

Patent

active

047898232

ABSTRACT:
In a power sensor for RF power measurments, comprising a thin-film absorbing resistor formed on the top surface of a support member and a thermocouple which is electrically isolated from the circuit of said absorbing resistor, the absorbing resistor is formed on an insulating film of a silicon support member so as to increase the sensitivity and to facilitate manufacture thereof, the silicon support member including an island formed beneath the absorbing resistor, a thermally conducting portion formed in spaced relationship thereto with a narrow bridge portion provided inbetween, and said thermocouple being constituted by the bridge portion and by mutually spaced contact zones formed thereon.

REFERENCES:
patent: 3801949 (1974-04-01), Larrabee
patent: 3881181 (1975-04-01), Khajezadeh
patent: 3986196 (1976-10-01), Decker et al.
patent: 4044371 (1977-08-01), Abdelrahman et al.
patent: 4072982 (1978-02-01), Stein
patent: 4152718 (1979-05-01), Cachier
patent: 4229753 (1980-10-01), Bergeron et al.
"High Sensitivity Miniature-Sized Microwave-Power Monitor", by Yoko et al., Elect. Letters, 2/76, vol. 12, #3, cl. 324-106; pp. 67-68.
"Temperature Range of Silicon Sensors Tops 350.degree. C. mark", by Gosch, Electronics, 5/5/82, vol. 55, #9, pp. 73-74, cl. 357-28.
"A Thin-Film/Semi-conductor Thermocouple for Microwave Power Measurements", by Jackson, HP Journal, 9/74, pp.16-18.

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