Field effect transistor (FET) circuit utilizing substrate potent

Details Field effect transistor (FET) circuit utilizing substrate potent Field effect transistor (FET) circuit utilizing substrate potent

1977-01-31

1978-06-06

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307264, 307DIG1, 307DIG4, H03K 1760, H03K 1704

Patent

active

040938751

ABSTRACT:
Disclosed is a field effect transistor (FET) circuit utilizing three sources of potential, the third source of potential being derived from the substrate. An input stage, connected between first and second sources of potential, is adapted to receive a logic input signal approximating said first and second sources of potential. An output stage connected between the first source of potential and a third source of potential, is adapted to provide a logical output signal approximating said first and third sources of potential. The third source of potential, which is derived from the substrate, provides a potential level suitable for turning off depletion mode FET devices.

REFERENCES:
patent: 3912948 (1975-10-01), Bapat
patent: 3938108 (1976-02-01), Salsbury et al.
patent: 3995172 (1976-11-01), Freeman et al.
patent: 4016476 (1977-04-01), Morokawa et al.
Hsu, "True, Push-Pull Driver;" IBM Tech. Discl. Bull.; vol., 19, No. 3, pp. 998-999; 8/1976.
Chu et al., "Bootstrap Push-Pull Driver," IBM Tech. Discl. Bull.; vol. 18, No. 3, pp. 710-711; 8/1975.
Aoki et al., "Field-Effect Transistor Driver Circuit," IBM Tech. Discl. Bull.; vol. 17, No. 7, pp. 2066-2067; 12/1974.
Pi et al., "Driver Using Unity-Gain Design in Active State," IBM Tech. Discl. Bull.; vol. 19, No. 6, p. 2132; 11/1976.

Affiliated with

Also associated with

Rating

Field effect transistor (FET) circuit utilizing substrate potent does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor (FET) circuit utilizing substrate potent, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor (FET) circuit utilizing substrate potent will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1494867