Semiconductor structure having transistor and other elements on

Details Semiconductor structure having transistor and other elements on Semiconductor structure having transistor and other elements on

1995-06-07

1997-07-15

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 61, 257 71, 257 72, 257296, 257350, 257352, H01L 2904, H01L 31036, H01L 310376, H01L 3120

Patent

active

056486634

ABSTRACT:
A thin film transistor comprises a gate electrode, an insulating layer and a semiconductor layer formed and laminated on an insulating substrate. The insulating layer and the semiconductor layer have the same planar pattern.

REFERENCES:
patent: 4425572 (1984-01-01), Takafuji et al.
patent: 4582395 (1986-04-01), Morozumi
patent: 4609930 (1986-09-01), Yamazaki
patent: 4646424 (1987-03-01), Parks et al.
patent: 4958205 (1990-09-01), Takeda et al.
patent: 4963955 (1990-10-01), Hatanaka et al.

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