Compound semiconductor device having a semiconductor-converted c

Details Compound semiconductor device having a semiconductor-converted c Compound semiconductor device having a semiconductor-converted c

1979-03-22

1981-10-20

James, Andrew J.

Electricity: conductors and insulators

Feedthrough or bushing

Compression

357 2, 357 65, 357 67, 357 68, 174 685, H01L 2724, H01L 4500, H01L 2348

Patent

active

042964245

ABSTRACT:
In a compound semiconductor device such as a magnetoresistance element or Hall element having a compound semiconductor portion such as of InSb and an electrode portion, a portion of the compound semiconductor portion is exposed to energy irradiation to be converted into an alloy state or amorphous state and rendered conductive to form the electrode portion. The portion rendered conductive is contiguous to and in ohmic contact with the unexposed portion of the compound semiconductor and used as a shorting bar electrode or an external lead bonding pad.

REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3634927 (1972-01-01), Neale et al.
patent: 3716844 (1973-02-01), Brodsky
patent: 3920485 (1975-11-01), Ansell et al.
patent: 4017890 (1977-04-01), Howard et al.
patent: 4081601 (1978-03-01), Dinella et al.

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