Semiconductor light emitting device and manufacturing method

Coherent light generators – Particular active media – Semiconductor

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372 43, 372 44, 372 46, 372 50, 257 96, 257103, H01S 319, H01L 3300

Patent

active

060848995

ABSTRACT:
A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.

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