Integrated gate turn-off device with lateral regenerative portio

Details Integrated gate turn-off device with lateral regenerative portio Integrated gate turn-off device with lateral regenerative portio

1978-12-22

1981-05-19

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 35, 307252A, 307252C, 307252K, H01L 2974

Patent

active

042688469

ABSTRACT:
A gate turn-off device is formed by the integration of a lateral SCR and a vertical power transistor operating in parallel, with the latter carrying most of the load current whereby the former may be easily turned off which in turn terminates base drive to the transistor and thus the device is turned OFF.

REFERENCES:
patent: 3265909 (1966-08-01), Gentry
patent: 3979766 (1976-09-01), Tsuyuki
patent: 4015143 (1977-03-01), Tokunaga et al.
patent: 4112315 (1978-09-01), Ohhinata
patent: 4125787 (1978-11-01), Ohhinata et al.

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