Solid-state imaging device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

357 23, 357 31, 307304, 307311, H01L 2714

Patent

active

042688450

ABSTRACT:
A solid-state imaging device of a picture element construction made up of photodiodes consisting of an N-type semiconductor substrate, a P-type well region formed in the main surface of said semiconductor substrate, and an N-type region formed in said well region, and vertical switching insulated-gate field effect transistors which utilize said N-type region as either the source or the drain, characterized in that a video voltage is applied to said substrate.

REFERENCES:
patent: 4143389 (1979-03-01), Koike
patent: 4148501 (1979-04-01), Koike
patent: 4189749 (1980-02-01), Hiroshima
patent: 4209806 (1980-07-01), Koike

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