Nonvolatile semiconductor memory having improved source line dri

Details Nonvolatile semiconductor memory having improved source line dri Nonvolatile semiconductor memory having improved source line dri

1997-11-24

2000-07-04

Elms, Richard

Static information storage and retrieval

Floating gate

Particular biasing

36518505, 36518511, G11C 1606

Patent

active

060847999

ABSTRACT:
A nonvolatile semiconductor memory, having an improved source line drive circuit, comprises a memory core section including a memory cell array, a control circuit, the memory cell array having a plurality of memory cells respectively, constituted by transistors of layered gate structure having source electrodes, and each of the memory cells being connected to a common word line and a corresponding signal line. The control circuit senses a signal line voltage in accordance with data of the corresponding memory cell, and amplifies the signal line voltage to output a signal. The source electrodes of the plurality of the memory cells are connected to the source diffusion layer in common. A peripheral circuit includes a source line drive circuit for controlling a potential of each source line to be maintained substantially constant.

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