Method of growing an amorphous silicon film

Details Method of growing an amorphous silicon film Method of growing an amorphous silicon film

1994-07-22

1997-07-15

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

427578, 148DIG1, H01L 2102

Patent

active

056482930

ABSTRACT:
The invention provides a novel method of depositing an amorphous silicon film wherein a high frequency discontinuous discharge is carried out to decompose a silane system gas for a chemical vapor deposition for depositing an amorphous silicon film under conditions of a cyclic frequency of 500 Hz or more and a duty ratio of 30% or less.

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By Y. Watanabe et al., "Powder-free plasma chemical vapor deposition of hydrogenated amorphous silicon with high rf power density using modulated rf discharge", Applied Physics Letters, Oct. 15, 1990, vol. 57, No. 16, pp. 1616-1618.
By M. Shiratani et al., "Reaction Control in Processing Plasmas by Square-Wave-Amplitude-Modulating RF Voltage", Technology Reports of Kyushu University, Dec. 1989, vol. 62, No. 6, pp. 678, 679 and 681.

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