Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1994-11-02

1997-07-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41TFT, 437 44, 437 37, 437 30, H01L 21336

Patent

active

056482779

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film on a semiconductor layer, forming a gate electrode on the insulating film, pattering the first insulating film into a second insulating film so that a portion of the semiconductor layer is exposed while the second insulating film has extensions which extend beyond the side edges of the gate electrode, and performing ion introduction for forming impurity regions using the gate electrode and extensions of the gate insulating film as a mask. The condition of the ion introduction is varied in order to control the regions of the semiconductor layer to be added with the impurity and the concentration of the impurity therein.

REFERENCES:
patent: 4232327 (1980-11-01), Hsu
patent: 4728617 (1988-03-01), Woo et al.
patent: 5100810 (1992-03-01), Yoshimi et al.
patent: 5292675 (1994-03-01), Codama
patent: 5508209 (1996-04-01), Zhang et al.

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