Fishing – trapping – and vermin destroying
Patent
1995-06-07
1997-07-15
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437 7, H01L 2166
Patent
active
056482752
ABSTRACT:
The reliability of thin film insulators is determined with noise measurements which find the barrier height mean and standard deviation. A constant voltage source is applied across the thin film insulator. A low noise amplifier is connected across a resistor which is in series with the insulator. A spectrum analyzer is connected to the low noise amplifier. The power density is obtained by observing the output of a spectrum analyzer. The current spectral density is compared to a predetermined reference to detect the presence of defects in the insulator.
REFERENCES:
patent: 4296372 (1981-10-01), Feurebaum
patent: 5049811 (1991-09-01), Dreyer et al.
patent: 5057441 (1991-10-01), Gutt et al.
patent: 5420513 (1995-05-01), Kimura
Amberiadis, K. and Van Der Ziel, A., 1/f Noise in Diffused and Ion-Implanted MOS Capacitors, Solid-State Electronics, vol. 26, No. 10, pp. 1009-1017, 1983. Printed in Great Britain.
Celik-Bulter, Z. and Hsiang, T.Y., Spectral Dependence of 1/f Noise of Gate Bias in N-Mosfets, Solid-State Electronics, vol. 30, No. 4, pp. 419-423, 1987. Printed in Great Britain.
Guttler, H.H. and werner, J.H., Influence of barrier inhomogeneities on noise at Schottkey contacts, Appl. Phys. Lett. 56 (12), 19 Mar. 1990, pp. 1113-1115.
Neri, Low-frequency noise in silicon-gate metal-oxide-silicon capacitors before oxide breakdown, Appl. Phys. Lett. 51 (25), 21 Dec. 1987, pp. 2167-2169.
Van Der Ziel, A., Unified Presentation of 1/f Noise in Electronic Devices: Fundamental 1/f Noise Sources, Proceedings of the IEEE, vol. 76, No. 3, Mar. 1988, pp. 233-258.
Wong, H. and Cheng, C., gate dielectric-dependent flicker noise in metal-oxide-semiconductor transistors, J. Appl. Phys. 67 (2), 15 Jan. 1990, pp. 863-867.
Young, K.K. and Hu, C., Charge Transport and Trapping Characteristics in Thin Nitride-Oxide Stacked Films, IEEE Electron Device Letters, vol. 9, No. 11, Nov. 1988, pp. 616-618.
Anselm Klaus A.
Smayling Michael C.
Chaudhari Chandra
Donaldson Richard L.
Laws Gerald E.
McClure C. Alan
Texas Instruments Incorporated
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