Stable non-crystalline material for switching devices

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357 61, H01L 4500

Patent

active

039757552

ABSTRACT:
A switching device having as the active switching element a material with a band gap between 0.6 and 1.2 eV and a mean coordination number of 4. These parameters provide a material having a glass transition temperature that is relatively high such that the material is resistant to devitrification. Amorphous (a-) CdAs.sub.2 is the most promising active switching material having the parameters, and a method of making thin films of a-CdAs.sub.2 by open source evaporation is disclosed.

REFERENCES:
patent: 3432729 (1969-03-01), Dyre
Electronic and Structural Properties of Amorphous Semiconductors, Le Comber et al., Eds., Academic Press, N.Y., 1973, p. 66.

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