Method of making isolated semiconductor devices utilizing ion-im

Details Method of making isolated semiconductor devices utilizing ion-im Method of making isolated semiconductor devices utilizing ion-im

1980-05-08

1981-10-20

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148175, 148190, 148191, 357 48, 357 63, H01L 21265, H01L 2120

Patent

active

042958989

ABSTRACT:
In forming p.sup.+ -type isolation region to define an isolated n-type island region in an n-type epitaxial layer grown on a p-type semiconductor substrate, the p.sup.+ -type isolation region is formed by burying, prior to the growing of the epitaxial layer, an Al-ion-implanted region in the p-type substrate by means of ion implantation and subsequent heat-treatment for driving-in, thereby enabling a very quick forming of the isolation region and an accurate control of the resistivity of the epitaxial layer.

REFERENCES:
patent: 3752715 (1973-08-01), Antipov et al.
patent: 3847677 (1974-11-01), Takeda et al.
patent: 3930909 (1976-01-01), Schmitz et al.
patent: 3992232 (1976-11-01), Kaji et al.
patent: 4128439 (1978-12-01), Jambotkar
Fairfield et al., "Reducing Autodoping in Epitaxial Silicon" IBM Tech. Discl. Bull., vol. 14, No. 5, Oct. 1971, p. 1634.

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