Low-stress and low-sensitivity metal film

Details Low-stress and low-sensitivity metal film Low-stress and low-sensitivity metal film

1997-04-01

2000-07-04

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257444, H01L 2978

Patent

active

060842822

ABSTRACT:
A thin-film coupled to a substrate includes a first layer and a second layer. Both layers are made of the same material, which is either a transition or a refractory metal. The first layer is doped by nitrogen and the second layer is not. The thin-film has lower stress level than a film made of the same material and having similar thickness as the thin-film, but without doping the film by nitrogen. Also, the thin-film has a lower sheet resistance than a film made of the same material, having similar thickness as the thin-film, and with similar atom percentage of nitrogen as the first layer. In one embodiment, the thin-film is used in a flat panel display.

REFERENCES:
patent: 4702967 (1987-10-01), Black et al.
patent: 5231306 (1993-07-01), Meikle et al.
patent: 5589712 (1996-12-01), Kawashima et al.
patent: 5670823 (1997-09-01), Kruger et al.
patent: 5747879 (1998-05-01), Rastogi et al.

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