Method for formation of a self-aligned N-well for isolated field

Details Method for formation of a self-aligned N-well for isolated field Method for formation of a self-aligned N-well for isolated field

1996-01-18

1997-06-24

Chaudhari, Chandra

Semiconductor device manufacturing: process

Electron emitter manufacture

438524, 438555, H01L 2122

Patent

active

056417063

ABSTRACT:
A method for use in manufacture of field emitter devices is provided specifically for forming electron emitter tips in a doped semiconductor substrate. The method comprises the following steps: forming a depression around an emitter area in the substrate; doping the substrate in the depression; and expanding the dopant in the depression into the emitter area.

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