High density integration of semiconductor circuit

Details High density integration of semiconductor circuit High density integration of semiconductor circuit

1988-09-02

1990-01-09

Larkins, William D.

357 49, 357 51, 357 55, 357 68, 357 75, 357 84, 357 88, H01L 2504, H01L 2906, H01L 2316

Patent

active

048931748

ABSTRACT:
An integrated circuit is disclosed in which a plurality of semiconductor substrates are stacked in such a manner that an insulating board, provided with (1) structure, such as grooves, for transmitting a coolant so as to dissipate heat, and (2) an electrical interconnection member for electrically connecting adjacent semiconductor substrates, is sandwiched between semiconductor substrates. In order to attain the high-speed signal transmission between a semiconductor substrate and an insulating board, a signal current flows not only in a main surface of the semiconductor substrate but also in directions perpendicular to the main surface. The insulating board may be formed of an insulating silicon carbide plate which has a plurality of grooves filled with a metal.

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Madgo, "Pyramid Shaped Electrical Feed Through in Silicon Wafers", IBM Technical Disclosure Bulletin, vol. 19, No. 4, Sep. 1976.

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