Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-05-15
2000-07-04
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438712, 216 66, H01L 21302
Patent
active
060838418
ABSTRACT:
A GaN-based compound semiconductor layer is formed on a substrate. An etch mask of a Ti film is formed on a surface of said gallium-nitride based compound semiconductor. The gallium-nitride based compound semiconductor is selectively etched through an opening of said etch mask. With this method, even where the semiconductor is difficult to etch, it is possible to efficiently etch the semiconductor vertically relative to a surface thereof by once forming a mask without troubles such as stripping-off of a mask. If the etch mask uses a metal film easy to oxidize to perform etching on the semiconductor layer while supplying an oxidizing source, the selective etch ratio can be further increased, enabling etching by a thin etch film.
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Ichihara Jun
Yano Hirohisa
Deo Duy-Vu
Rohm & Co., Ltd.
Utech Benjamin L.
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