Semiconductor pressure sensor

Details Semiconductor pressure sensor Semiconductor pressure sensor

1982-08-11

1984-07-17

Swisher, S. Clement

Measuring and testing

Fluid pressure gauge

Diaphragm

338 4, 357 26, G01L 906

Patent

active

044598556

ABSTRACT:
An improved semiconductor pressure sensor of the silicon diaphragm type is disclosed. The sensor includes a pressure sensor device composed of a substrate of monocrystalline silicon, a diffused resistive layer formed on one surface of the substrate and a cavity formed in the other surface to create a thin-walled area that includes the diffused resistive layer with the cavity surrounded by a thick-walled leg portion. A hermetic sealable cap covers the one surface of the sensor device. A conductive diffused region from which an electrical signal can be picked up is provided in the leg portion electrically connected to the diffused resistive layer.

REFERENCES:
patent: 3210620 (1965-10-01), Lin
patent: 4023562 (1977-05-01), Hynecek et al.
patent: 4202217 (1980-05-01), Kurtz et al.
patent: 4222277 (1980-09-01), Kurtz et al.
patent: 4291293 (1981-09-01), Yamada et al.
patent: 4332000 (1982-05-01), Petersen

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