High density semiconductor structure and method of making the sa

Details High density semiconductor structure and method of making the sa High density semiconductor structure and method of making the sa

1988-11-29

1991-06-18

James, Andrew J.

357 67, 357 65, H01L 2348

Patent

active

050253042

ABSTRACT:
A method of forming a high density semiconductor structure including one or more buried metal layers. One or more metal layers may be formed on a first semiconductor substrate, with the metal layer or layers being insulated from one another and from the substrate. One or more metal layers may be formed on the surface of a second substrate which may or may not be a semiconductor substrate. The topmost metal layers, either or both of which may have an insulating layer thereon, are placed in contact and heated in an oxidizing ambient atmosphere to form a bond therebetween. One or more vias connect the buried metal layers to the active devices in the substrates. The buried metal layers may form buried power and ground planes and buried metallization patterns for device interconnection.

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