Semiconductor device with resin bonding to support structure

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357 54, 357 74, 357 40, H01L 2328

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active

048931713

ABSTRACT:
A semiconductor device comprising a semiconductor element, a support member for supporting the semiconductor element and a bonding layer for bonding the semiconductor element on the support member. The bonding layer comprises a hard layer of a high-viscosity bonding agent which has a high viscosity before curing and which has an irregular free surface defining projections and cavities, and a soft layer of a low-viscosity bonding agent which has a low viscosity before curring and disposed within the cavities in the irregular free surface of the hard layer to fill them. The hard layer defining a portion of the bonding surfaces and the soft layer defining the remaining portion of the bonding surface to provide a continuous hybrid bonding surface for the bonding layer. A process for bonding a semiconductor element to a support member is also disclosed.

REFERENCES:
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patent: 4190855 (1980-02-01), Inoue
patent: 4377619 (1983-03-01), Schonhorn et al.
patent: 4604644 (1986-08-01), Beckham et al.
patent: 4745018 (1988-05-01), Chihara et al.
Chellis et al., "Epoxy Resin for Dielectric Layers", IBM Technical Disclosure Bulletin, vol. 12, No. 9, Feb. 1970, pp. 1487-1488.
Tower et al., "Design and Performance . . . Focal Planes", RCA Review, vol. 47, Jun. 1986, pp. 226-255.
Bolger et al., "Failure Mechanisms . . . Encapsulated I.C.'s", IEEE, 1983, pp. 227-231.
Bolger et al., "Die Attach in . . . Polyimides", IEEE, 1984, pp. 63-67.

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