Method of manufacturing bulk CMOS integrated circuits

Details Method of manufacturing bulk CMOS integrated circuits Method of manufacturing bulk CMOS integrated circuits

1980-06-30

1981-10-20

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148187, 352 44, H01L 2126

Patent

active

042952662

ABSTRACT:
The method presented may be utilized in manufacturing CMOS integrated circuits either in an isoplanar or in a LOCOS process. The method entails the simultaneous formation of the well region with the oxide isolation regions by a drive-in diffusion which is conducted in a dry oxygen ambient. The utilization of the process insures that compounds of silicon, nitrogen and oxygen will not be present in the bulk silicon where they can effect the quality of gate oxides which are subsequently formed.

REFERENCES:
patent: 3751722 (1973-08-01), Richman
patent: 3755001 (1973-08-01), Kooi et al.
patent: 3853633 (1974-12-01), Armstrong
patent: 4013484 (1977-03-01), Boleky et al.
patent: 4027380 (1977-06-01), Dealet al.
patent: 4135955 (1979-01-01), Gasner et al.
patent: 4221045 (1980-09-01), Godejahn
Nakajima et al., "Defects in a Gate Oxide Grown After the LOCOS Process", Jpn. J. of Appl. Physics, vol. 18, No. 5, May 1979, pp. 943-951.

Affiliated with

Also associated with

Rating

Method of manufacturing bulk CMOS integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing bulk CMOS integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing bulk CMOS integrated circuits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1484005