Patent
1977-11-22
1980-06-24
Clawson, Jr., Joseph E.
357 21, 357 43, 357 64, 357 92, H01L 2980
Patent
active
042097959
ABSTRACT:
A field effect transistor of the type wherein the conductivity of the channel thereof is variable by injecting the minority carriers into the channel from the gate thereof, is disclosed. The channel of the transistor includes minority carrier recombination centers in such an amount that the lifetime of the minority carriers in the channel may be shortened so as to sufficiently reduce the minority carrier storage effect in the channel. The recombination centers may comprise elements such as gold doped in the channel region. This field effect transistor is hardly subject to the minority carrier storage effect and is capable of effecting a turn-off action at a markedly high speed.
REFERENCES:
patent: 2754456 (1956-07-01), Madelung
patent: 2778956 (1957-01-01), Dacey et al.
patent: 2975344 (1961-03-01), Wegener
patent: 3056100 (1962-09-01), Warner
patent: 3184347 (1965-05-01), Hoerni
patent: 3274463 (1966-09-01), Hutson
"Junction Field-Effect Transistor Designed for Speedy Logic," Electronics, Aug. 19, 1976, vol. 49, #7, International Edition, pp. 4E, 6E.
J. Porter, "JFET-Transistor Yields Device with Negative Resistance," IEEE Trans. on Elec. Dev., Sep. 1976, pp. 1098-1099.
Clawson Jr. Joseph E.
Nippon Gakki Seizo Kabushiki Kaisha
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