Patent
1984-06-28
1985-12-24
Munson, Gene M.
357 4, 357 30, 357 88, H01L 2978, H01L 2714, H01L 3100
Patent
active
045610053
ABSTRACT:
An infrared radiation imaging device comprises a semiconductor body (1), for example of silicon, having a radiation-sensitive portion (2) in which charge-carriers (24) are generated on absorption of infrared radiation (4). The semiconductor body also includes a signal-processing portion in which the charge-carriers (24) are collected in a charge-transfer shift register, for example a surface-channel or buried-channel CCD. An electrical signal representative of the detected radiation is produced at an output (10) of the shift register. At least the radiation-sensitive portion (2) is depleted of free charge-carriers in the absence of the radiation (4). The semiconductor material of the signal-processing portion (3) has an energy band gap (E.sub.g) which is greater than the quantum energy of the detected infrared radiation (4). The radiation-sensitive portion (2) is of the same semiconductor material as the signal-processing portion (3) but comprises a plurality of alternating n-type and p-type layers. These layers form an energy band bending superlattice structure locally in the body (1) with a reduced effective band gap (E.sub.g '). The n-type and p-type layers have a doping concentration and thickness such that the superlattice structure can be depleted through its thickness without producing breakdown. The charge-carriers (24) are generated in the superlattice structure by transitions across the effective band gap (E.sub.g ') between the conduction and valence bands of the semiconductor material of the radiation-sensitive portion (2).
REFERENCES:
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Esaki, L. et al., "Superlattice and Negative Differential Conductivity in Semiconductors", IBM Journal of Research and Development, vol. 14, No. 61, pp. 61-65, (Jan. 1970).
Munson Gene M.
Schechter Marc D.
U.S. Philips Corporation
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