Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1979-02-12

1984-05-22

Larkins, William D.

357 50, 357 51, 357 67, 357 86, H01L 2704, H01L 2904, H01L 2352, H01L 2713

Patent

active

044504705

ABSTRACT:
An integrated circuit device of large scale integration and a method of manufacturing the same makes possible high density packing of circuit elements by eliminating a great number of very minute contact holes. Instead, a circuit-element connector comprised of a polycrystalline silicon wiring path is formed by selective oxidation. Impurity atoms are introduced into the semiconductor substrate through the polycrystalline silicon circuit-element connector to form a desired circuit element. A layer of high-conductive material is provided on the polycrystalline silicon layer.

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patent: 3673471 (1972-06-01), Klein et al.
patent: 4041522 (1977-08-01), Oguey et al.
patent: 4074304 (1978-02-01), Shiba
patent: 4109372 (1978-08-01), Geffken
patent: 4128845 (1978-12-01), Sakai
patent: 4161745 (1979-07-01), Slob
patent: 4190466 (1980-02-01), Bhottacharyya et al.
Jaeger, IBM Tech. Discl. Bull., vol. 19, No. 10, Mar. 1977, pp. 3942-3946.
Hamilton et al., Basic IC Engineering, McGraw-Hill, 1975, pp. 4-10.

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