Semiconductor image sensor

Details Semiconductor image sensor Semiconductor image sensor

1981-12-02

1984-05-22

Edlow, Martin H.

357 23, 357 49, 357 50, H01L 2714, H01L 2978, H01L 2712, H01L 2704

Patent

active

044504667

ABSTRACT:
A semiconductor image sensor which comprises a plurality of image sensor cells, each having a photosensing and accumulation region of an n.sup.+ -p.sup.- -(i)-p.sup.+ -n.sup.+ (or p.sup.+ -n.sup.- -(i)-n.sup.+ -p.sup.+) hook structure which is formed by sequentially forming its respective regions in a semiconductor substrate inwardly thereof from its surface. The photosensing and accumulation regions are isolated by insulating isolation regions from adjacent ones of them. A tapering conductive region, which acts as an electric field lens on charged carriers, is formed to extend into a high resistivity layer of the photosensing region from the end face of each insulating isolation region on the side of the semiconductor substrate.

REFERENCES:
patent: 4106050 (1978-08-01), Riseman
patent: 4199771 (1980-04-01), Nishizawa et al.
patent: 4377817 (1983-03-01), Nishizawa et al.
Nishizawa et al., "Static Induction Transistor Image Sensors", IEEE Trans. on Electron Dev., vol. ED-26, No. 12, pp. 1970-1977, Dec. 1979.

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