Heterojunction bipolar transistor and integration of same with f

Details Heterojunction bipolar transistor and integration of same with f Heterojunction bipolar transistor and integration of same with f

1991-05-14

1992-03-17

Prenty, Mark

357 34, 357 16, H01L 2702, H01L 2972, H01L 29161

Patent

active

050973126

ABSTRACT:
An integrated circuit including both bipolar and field effect devices is disclosed, comprising a first continuous layer 102/104 of semi-insulating semiconductor material having a continuous first surface, a doped channel region 108 in the first layer 102/104 at the first surface of the first layer 102/104, a doped collector region 114 in the first layer 102/104 at the first surface spaced from the channel region 108, a doped base layer 122 on the collector region 114, the base layer 122 of conductivity type opposite that of the collector region 114, a doped emitter region 124 on the base layer 122, the emitter region 124 of the same conductivity type as the collector 114 to provide a bipolar device, the emitter region 124 made of semiconductor material with a wider bandgap than the base layer 122 semiconductor material, source and drain contacts 138 on the channel region 108, a gate 146 on the channel region 108 between the source and drain contacts 138 to provide a field effect device, and electrical coupling between at least one of the emitter 124, base 122 and collector 114 of the bipolar device and at least one of the gate 146, source and drain 138 of the field effect device. Other devices, systems and methods are also disclosed.

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