Vertical PNP transistor

Details Vertical PNP transistor Vertical PNP transistor

1991-01-18

1992-03-17

Prenty, Mark

357 68, H01L 2972, H01L 2348

Patent

active

050973096

ABSTRACT:
A vertical PNP transistor for use in an integrated circuit is disclosed. A P-type substrate serves as collector. An N-type epitaxial layer is formed on the substrate and serves as base. A P-type region is formed in the epitaxial layer and serves as emitter. An N.sup.+ -type localized buried layer is formed on the substrate in the area beneath the emitter. The localized buried layer covers less than all of the area under the emitter. An N.sup.+ -type sinker region is formed through the epitaxial layer, connecting to the localized buried layer and serving as a connection to the base of the vertical PNP transistor.

REFERENCES:
patent: 4151540 (1979-04-01), Sander et al.
patent: 4949150 (1990-08-01), Giannella

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