1991-03-15
1992-03-17
Carroll, J.
357 237, 357 45, 357 71, H01L 2722, H01L 2701, H01L 2710, H01L 2348
Patent
active
050972979
ABSTRACT:
A thin film transistor including at least one elongated source electrode and one elongated drain electrode disposed parallel to each other with a channel region formed by depositing a semiconductor material substantially perpendicular to and across the parallel electrodes, a gate insulating film formed on the channel region and a gate electrode formed on the gate insulating film. In a preferred embodiment, there is a plurality of source electrodes and one fewer drain electrodes with each drain electrode disposed between two source electrodes. Displacement or misalignment of masks during formation do not result in a change in parasitic capacitance.
REFERENCES:
patent: 3385731 (1968-05-01), Weimer
patent: 4582395 (1986-04-01), Morozumi
patent: 4597001 (1986-06-01), Bortscheller et al.
patent: 4770498 (1988-09-01), Aoki et al.
patent: 4804953 (1989-02-01), Castleberry
patent: 4853755 (1989-08-01), Okabe et al.
patent: 4907861 (1990-03-01), Muto
D. J. Krick, "MNOS memory array fabricated on an insulating substrate", IBM Technical Disclosure Bulletin, vol. 15 (Jul. 1972) pp. 466-467.
Morozumi, et al., "Low Temperature Processed Poly Si TFT and Its Application Large Area LCD", Japan Display '86, 1986 pp. 196-199.
Ohshima, et al., "9.5 -in. Poly-Si TFT-LCD with New Transistor Configuration", SID 88 Digest, May 24, 1988, pp. 408-411.
Carroll J.
Seiko Epson Corporation
LandOfFree
Thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1479779