Heterojunction field effect transistor device and process of fab

Details Heterojunction field effect transistor device and process of fab Heterojunction field effect transistor device and process of fab

1988-05-16

1990-01-09

James, Andrew J.

357 16, 357 55, H01L 2980, H01L 29225

Patent

active

048931551

ABSTRACT:
For improvement in a transit time of electrons, there is disclosed a heterojunction field effect transistor fabricated on a semi-insulating GaAs substrate, comprising a first layer overlying the semi-insulating substrate and formed of a high-purity GaAs, a second layer overlying the first layer and formed of an n-type AlGaAs which is smaller in electron affinity than the high-purity GaAs, a source region penetrating from the first layer into the second layer so as to be in contact with the active channel layer formed in the first layer and formed of an gallium-rich AlGaAs, a drain region, and a gate electrode formed on the second layer, an energy gap takes place between the source region and the first layer due to a lower edge of the conduction band thereof higher in energy level than that of the high-purity GaAs, thereby accelerating electrons supplied from the source region to the active channel layer.

REFERENCES:
patent: 4593301 (1986-06-01), Inata et al.

Affiliated with

Also associated with

Rating

Heterojunction field effect transistor device and process of fab does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction field effect transistor device and process of fab, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction field effect transistor device and process of fab will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-147944