Ion shower apparatus

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118728, 118 501, 118620, 156643, 156646, 204298, C23F 102, C03C 1500, B44C 122, H01L 21306

Patent

active

044500319

ABSTRACT:
An ion shower apparatus comprising a plasma formation chamber in which plasma is produced so as to produce ions, a single ion extraction grid disposed in one portion of the plasma formation chamber and for extracting the ions from the plasma formation chamber so as to form an ion beam in the form of shower, a specimen chamber in which the surface of a specimen subjected to etching or deposition or a target subjected to sputtering is irradiated with the ion beam in the form of shower, and a shield grid disposed in the vicinity of the ion extraction grid in the plasma formation chamber and spaced apart from the thickness of the plasma sheath produced over the ion extraction grid, in a manner that the shield grid permits the passage of the plasma therethrough and prevents the electric field produced by the ion extraction grid substantially from extending to the remaining region of the plasma formation chamber. The ion extraction grid is not damaged. An ion beam with a high current is obtained stably.

REFERENCES:
patent: 4233109 (1980-11-01), Nishizawa
patent: 4243506 (1981-01-01), Ikeda et al.
patent: 4259145 (1981-03-01), Harper
Low Energy Ion Beam Etching, J. M. E. Harper et al., pp. 1077-1083, J. Electrochem. Soc.:Solid-State Science and Technology, vol. 128, No. 5, May 1981.
Ion Milling for Semiconductor Production Processes, Dr. L. D. Bollinger, pp. 66-70, Nov. 1977/Solid State Technology.
Ion Beam Divergence Characteristics of Two-Grid Accelerator Systems, G. Aston et al., pp. 516-524, AIAA Journal, vol. 16, No. 5, May 1978.

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