Process for positioning a mask within a concave semiconductor st

Details Process for positioning a mask within a concave semiconductor st Process for positioning a mask within a concave semiconductor st

1991-04-29

1992-03-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437229, 437225, 437228, 148DIG106, 148DIG50, H01L 2176

Patent

active

050968491

ABSTRACT:
A method is described for selectively masking sidewall regions of a concave surface formed in a semiconductor body, the method comprising the steps of: forming a conformal layer of masking material on a sidewall of the concave structure; emplacing in the concave structure, a selectively removable material that partially fills the concave structure, an upper surface of the material determining the edge of a region of the concave structure to be masked; removing a portion of the conformal layer above the upper surface of the selectively removable material; and removing the selectively removable material to leave a region of remaining conformal material as a mask.

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"A Method of Sidewall Image Transfer Utilizing the Polyimide-Nitride Material Interaction", Research Disclosure, 28622, Feb. 1988, No. 286, Kenneth Mason Publications Ltd., England.

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