Methods of fabricating transducers employing flat bondable surfa

Metal working – Method of mechanical manufacture – Assembling or joining

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29588, 29590, 29610SG, B01J 1700

Patent

active

042087821

ABSTRACT:
A semiconductor pressure transducer includes a base member fabricated from n-type silicon. The base member has a central depression defining an active area and located on a bottom, surface; diffused in the top surface, is at least one contact area which is directed from the active region towards the periphery of said base member. A piezoresistive sensor is located on said top surface and in contact with said contact area within said active region. A layer of epitaxial material surrounds the active region and has an aperture on the surface which is in communication with the contact area outside said active region. The epitaxial layer is polished at a top surface and a housing is coupled to the region by means of a suitable bond. Alternate methods of fabricating the transducer are shown employing both polycrystalline and monocrystalline epitaxial layers.

REFERENCES:
patent: 3739315 (1973-06-01), Kurtz
patent: 3753196 (1973-08-01), Kurtz
patent: 3858150 (1974-12-01), Gurther
patent: 4003127 (1977-01-01), Jaffe
patent: 4040172 (1977-08-01), Kurtz
patent: 4079508 (1978-03-01), Nunn

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