Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1989-11-29
1992-03-17
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430967, 378 35, G03F 900
Patent
active
050967916
ABSTRACT:
A method of obtaining a mask for X-ray lithography having a thin oxidized metal membrane supported on an annular silicon base. The method consists of the following steps: (a) deposition of a metal layer on a silicon wafer; (b) oxidation of the metal layer to form a continuous thin oxide layer; (c) etching selectively a portion of the backside of said substrate, obtaining a thin membrane of oxidized metal at the etched portion; and (d) obtaining a pattern delineation through a photoresist on said membrane framed by the silicon substrate. A most preferred deposited metal is aluminum which is converted to aluminum oxide. Then a portion of the silicon substrate is removed in order to expose the aluminum oxide membrane attached to the remaining silicon substrate. The mask prepared according to the present invention does not suffer from any distortion and preserves its accuracy even under the stresses incurred during the mask preparation and use.
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Bassous et al., "High Transmission X-Ray Mask for Lithographic Applications", Solid State Tech., Sep. 1976, pp. 55-58.
Determination of Wavelength and Excitation Voltage for X-Ray Lithography Paul A. Sullivan and John H. McCoy, IEEE Transactions on Electron Devices, vol. Ed-23, No. 4, Apr. 1976.
Abstract: New X-Ray Mask of Al-Al.sub.2 O.sub.3 Structure, T. Funayama, Y. Takayama T. Inagaki and M. Nakamura, J. Vac. Sci. Technol., vol. 12, No. 6, Nov./Dec. 1975.
Bowers Jr. Charles L.
Neville Thomas R.
Technion Research and Development Foundation Ltd.
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