Semiconductor memory device comprising a test circuit and a meth

Excavating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

364579, G06F 1520

Patent

active

053847849

ABSTRACT:
A semiconductor memory device includes a memory array. The bit line pairs of the odd number order in the memory array belong to a first group, and the bit line pairs of the even number order belong to a second group. A first amplifier is connected to each bit line pair. Corresponding to the first group, write buses read buses and a read/test circuit are provided. Corresponding to the second group, write buses read buses and a read/test circuit are provided. A column decoder selects a plurality of bit line pairs simultaneously at the time of testing. At the time of testing, each of the read/test circuits compares data read out from the plurality of bit line pairs belonging to the corresponding group with a given expected data for providing the comparison result.

REFERENCES:
patent: Re31056 (1982-10-01), Chau et al.
patent: 4479202 (1984-10-01), Uchida
patent: 4713797 (1987-12-01), Morton et al.
patent: 4954992 (1990-09-01), Kumanoya et al.
patent: 4962482 (1990-10-01), Jinb
patent: 4984206 (1991-01-01), Komatsu et al.
patent: 5034923 (1991-07-01), Kuo et al.
patent: 5046049 (1991-09-01), Choi et al.
patent: 5068830 (1991-11-01), Plants et al.
patent: 5200926 (1993-04-01), Iwashashi et al.
patent: 5214609 (1993-05-01), Kato et al.
1989 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, Feb. 1989, "FAM 16.4: A 60ns 3.3V 16Mb DRAM", Arimoto et al..
1987 Symposium on VLSI Circuits, Digest of Technical Papers, IEEE Cat. No. 87 TH 0190-9, May 1987, "BICMOS Circuit Technology for High Speed DRAMs", Watanabe et al., pp. 79-80.
1990 Symposium on VLSI Circuits, Digest of Technical Papers, IEEE Cat. No. 90 CH 2885-2, Jun. 1990, "A 1.5V Circuit Technology for 64 Mb DRAMs", Nakagome et al. pp. 17-18.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device comprising a test circuit and a meth does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device comprising a test circuit and a meth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device comprising a test circuit and a meth will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1472873

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.