Vertical channel field effect transistor

Details Vertical channel field effect transistor Vertical channel field effect transistor

1980-05-14

1982-08-03

Rosenberger, R. A.

357 22, G01L 2906

Patent

active

043430155

ABSTRACT:
Improved high frequency GaAs FETs have a higher breakdown voltage, lower input gate capacitance and lower source (or drain) resistance. A preferentially etched groove structure yields parallel trapezoidal semiconductor fingers that are wider at the top than at the bottom. Every finger intersects a high resistivity, semi-insulating region which surrounds the active device area and is fabricated by high energy particle bombardment. Metal gates are deposited within the grooves on three sides of the trapezoidal fingers.

REFERENCES:
patent: 4129879 (1978-12-01), Tantraporn et al.
patent: 4171234 (1979-10-01), Nagata et al.
patent: 4262296 (1981-04-01), Shealy et al.
Donnelly et al., "Multiple-Energy Proton Bombardment in n.sup.+ -GaAs", Solid State Electronics, 1977, vol. 20, pp. 183-189.
Stein, H. J.; "Electrical Studies of Low Temperature Neutron-and Electron-Irradiated Epitaxial n-Type GaAs", J. of Applied Physics, vol. 40, No. 13, Dec. 1969.
Foyt et al., "Isolation of Junction Devices in GaAs Using Proton Bombardment", Solid State Electronics, 1969, vol. 12, pp. 209-214.

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