Process for forming a silicon pressure transducer

Details Process for forming a silicon pressure transducer Process for forming a silicon pressure transducer

1986-12-22

1988-01-26

Powell, William A.

Electrical resistors

Strain gauge type

Fluid- or gas pressure-actuated

29 2535, 29610SG, 148 332, 156644, 156647, 156653, 156657, 1566591, 156662, 357 26, 428156, G01L 122, H01L 21306, B44C 122, C03C 1500

Patent

active

047219386

ABSTRACT:
A piezoresistive pressure transducer is formed in a silicon layer which has been grown over a monocrystalline silicon substrate, a central portion of which had been earlier coated with a silicon dioxide layer having a plurality of apertures under each of which had been formed a heavily doped etch resistant region. The silicon layer is grown epitaxially over the apertures to be monocrystalline but grows as polycrystalline material over the silicon dioxide. Then the silicon substrate is etched to remove its central portion under the silicon dioxide and the heavily doped regions, leaving a thick surrounding portion for support. Resistors are formed in the monocrystalline portions of the grown layer overlying the heavily doped regions.

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Gallagher, Robert T., "Thomson-CSF, CNET Team for SOI," Electronics Week, (Semiconductor Section), Mar. 11, 1985.
Rathman, Silversmith and Burns, "Lateral Epitaxial Overgrowth of Silicon on SiO.sub.2," Journal of the Electrochemical Society: Solid State Science and Technology, v. 129, No. 10, pp. 2303-2306 (Oct. 1982).
Celler, Robinson and Trimble, "Dielectrically Isolated Thick Si Films by Lateral Epitaxy from the Melt," Journal of the Electrochemical Society: Solid-State Science and Technology, v. 132, No. 1, pp. 211-219 (Jan. 1985).

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