Reductive elimination chemical vapor deposition processes utiliz

Details Reductive elimination chemical vapor deposition processes utiliz Reductive elimination chemical vapor deposition processes utiliz

1993-06-17

1995-01-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437187, 437192, 437196, H01L 21283, C23C 1646

Patent

active

053842898

ABSTRACT:
A method of chemical vapor depositing a layer on a semiconductor wafer includes: a) positioning a semiconductor wafer within a chemical vapor deposition reactor; b) providing an organometallic reductive elimination precursor source in a non-gaseous form, the non-gaseous organometallic precursor compound containing at least two ligands bonded to a linking atom; c) subjecting the non-gaseous organometallic reductive elimination precursor to temperature and pressure conditions which vaporize the non-gaseous organometallic reductive elimination precursor into a source gas, and providing the source gas into the chemical vapor deposition reactor having the semiconductor wafer positioned therein; d) subjecting the source gas to reactive conditions within the reactor effective to impart a reductive elimination reaction of the precursor which reduces the linking atom from the precursor and which oxidizes the ligands to generate gaseous molecules having all atoms in a closed shell, non-ionic configuration, with the gaseous molecules being expelled from the reactor; and e) depositing a layer on the wafer, the layer comprising the reduced linking atom.

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