Non-conformal and oxidizable etch stops for submicron features

Details Non-conformal and oxidizable etch stops for submicron features Non-conformal and oxidizable etch stops for submicron features

1992-12-29

1995-01-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437193, H01L 2144

Patent

active

053842812

ABSTRACT:
A process for etching narrow features, particularly submicron borderless contacts, in a semiconductor substrate is disclosed. The process comprises depositing, by an orientation-sensitive technique, film which will act as an etch stop. The film is significantly thicker on horizontal surfaces than on vertical. A second layer is deposited and then etched using the first film as an etch stop. In one embodiment the etch stop is composed of an oxidizable material.

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C. G. Jambotkar and P. P. Wang, "Compact Dynamic Random-Access Memory Cell", IBM Technical Disclosure Bulletin, 23, No. 7A (1980).
Anonymous, "Borderless Diffusion Contact Process for Array Structures", IBM Research Disclosure, No. 282 (1987).
Anonymous, "Contact Hole Etching Process", IBM Research Disclosure, No. 300 (1989).

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