Method for reduction of off-current in thin film transistors

Details Method for reduction of off-current in thin film transistors Method for reduction of off-current in thin film transistors

1993-10-04

1995-01-24

Fourson, George

Fishing, trapping, and vermin destroying

437101, 437909, 437228, 156651, H01L 2124

Patent

active

053842715

ABSTRACT:
A method of fabricating a thin film transistor having reduced off-current leakage includes the steps of forming a TFT body with a channel region disposed between a source electrode and a drain electrode and then passivating the exposed portion of the channel region. The passivation includes the steps of wet etching the exposed portions of the channel region in an hydrofluoric acid etchant for a first selected etch time; dry etching the exposed channel region in a reactive ion etching procedure for a second selected etch time; wet etching the channel region again with hydrofluoric acid for a third selected etch time; and then treating the channel region with a cleansing agent, such as photoresist stripper; and annealing the exposed portion of the channel region.

REFERENCES:
patent: 4704783 (1987-11-01), Possin et al.
patent: 5130263 (1992-07-01), Possin et al.
patent: 5137841 (1992-08-01), Takeda et al.
patent: 5241192 (1993-08-01), Possin et al.
patent: 5281546 (1994-01-01), Possin et al.

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