Method of forming infrared detector by hydrogen plasma etching t

Details Method of forming infrared detector by hydrogen plasma etching t Method of forming infrared detector by hydrogen plasma etching t

1993-10-19

1995-01-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 5, 437245, 437937, 156643, 156646, H01L 3118, H01L 2144

Patent

active

053842677

ABSTRACT:
A metal interconnect fabrication process for hybrid solid state systems such as thermal imaging system (50). A plurality of vias (62) are formed in a focal plane array (60) between the thermal sensors (20) to expose a corresponding array of contact pads (84) on a silicon processor (80) bonded to the focal plane array (60). A metal film layer (30) is disposed on the focal plane array (60) to fill the vias (62). Photoresist material (32) is patterned on the metal layer (30) to correspond with the desired sensor signal flow path. With the photoresist material (32) still in place, the metal layer (30) is dry etched to produce the desired metal interconnect pattern by removing portions of the metal layer (30) unprotected by the photoresist material (32).

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