Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-09-22

2000-01-11

Sanghavi, Hemang

Coherent light generators

Particular active media

Semiconductor

372 46, 372 50, 372 20, H01S 319, H01S 310

Patent

active

060143940

ABSTRACT:
A semiconductor laser is provided having excellent characteristics such as long life, less variable threshold current due to the temperature change, and low noise, by effectively preventing leakage of electrons from the active layer. The semiconductor laser is provided with a electron barrier layer and the guide layer of the laser is doped with an n-type dopant, such that a high electron barrier is constructed between the guide layer and the cladding layer.

REFERENCES:
patent: 5297158 (1994-03-01), Naitou et al.
patent: 5416790 (1995-05-01), Yodoshi et al.
patent: 5452316 (1995-09-01), Seki et al.
patent: 5509024 (1996-04-01), Bour et al.
patent: 5608752 (1997-03-01), Goto et al.
Hecht, J., Understanding Lasers, Second Edition, IEEE Press, pp. 256-260, 1994.
H. Adachi et al., "Self-Sustained Pulsation in 650-nm-Band AlGaInP Visible-laser Diodes with Highly Doped Saturable Absorbing Layer", pp. 1406-1408, IEEE Photonics Technology Letters, vol. 7, No. 12, Dec. 1995.

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