Semiconductor memory device permitting large output current from

Details Semiconductor memory device permitting large output current from Semiconductor memory device permitting large output current from

1998-03-23

1999-11-09

Nelms, David

Static information storage and retrieval

Addressing

Including particular address buffer or latch circuit...

36518905, 36518911, 365227, G11C 800

Patent

active

059827050

ABSTRACT:
An output transistor in an output buffer in a semiconductor memory device is formed in a well region which is electrically isolated from the substrate by a triple well structure. When the output transistor conducts, the potential of the well in which the output transistor is formed is controlled to follow the source potential of the output transistor, so that the increase in the threshold voltage caused by a substrate biasing effect can be prevented, and larger output current results.

REFERENCES:
patent: 4707625 (1987-11-01), Yanagisawa
patent: 5543734 (1996-08-01), Volk et al.
patent: 5559464 (1996-09-01), Orii et al.
patent: 5847595 (1998-12-01), Kono et al.

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