Semiconductor memory

Details Semiconductor memory Semiconductor memory

1998-04-22

1999-11-09

Hoang, Huan

Static information storage and retrieval

Powering

365149, 36518911, 365210, 365203, G11C 700, G11C 1124

Patent

active

059826959

ABSTRACT:
A semiconductor memory includes memory cell array, a voltage boosting circuit, a potential generating circuit and a sense amplifier. The memory cell array is composed of a matrix arrangement of memory cells. Each memory cell is composed of a storage device which is selectively controlled by a word line control signal and a bit line control signal supplied to a word line and a bit line at a predetermined timing. The voltage boosting circuit boosts a potential on a word line selected by the word line control signal up to a first potential that is higher than an internal power source potential. The potential generating circuit sets the potential of the bit line selected by the bit line control signal. The potential of the bit line is set to a second potential that is higher than a potential that is lower than the first potential by a threshold of the memory cell. The sense amplifier is operated using the second potential as an operating power source. The sense amplifier amplifies a potential difference between a reference bit line and a read bit line to which data stored in the selectively controlled memory cell is transmitted.

REFERENCES:
patent: 4907200 (1990-03-01), Ikawa et al.
patent: 5703814 (1997-12-01), Nishimura et al.
patent: 5719814 (1998-02-01), Ishikawa
patent: 5822253 (1998-10-01), Lines

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