Test device for insulated-gate field effect transistor and testi

Details Test device for insulated-gate field effect transistor and testi Test device for insulated-gate field effect transistor and testi

1997-08-27

1998-06-02

Karlsen, Ernest F.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

G01R 3126

Patent

active

057606005

ABSTRACT:
A test device which allows a measurement of a characteristic of an insulated-gate field effect transistor excepting the contact resistance, and a simultaneous measurement of a characteristic of the transistor including the contact resistance and the contact resistance itself, as well as a testing circuit and a testing method which use the test device. The test device includes in addition to a contact (contact for drain) and another contact (contact for source) in the proximity of a gate electrode, contacts remote from the gate electrode are provided in expanded areas of a rectangular impurity diffusion region, and two pairs of terminals wired branched from the contacts are provided. One terminal of each of the pairs of terminals and terminals wired from the remote contacts are used as measurement terminals.

REFERENCES:
patent: 3795859 (1974-03-01), Benante et al.
patent: 5166608 (1992-11-01), Bowles
patent: 5287055 (1994-02-01), Cini et al.

Affiliated with

Also associated with

Rating

Test device for insulated-gate field effect transistor and testi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Test device for insulated-gate field effect transistor and testi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Test device for insulated-gate field effect transistor and testi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1464532