Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-08-18
2000-01-11
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257536, H01L 2900
Patent
active
060139404
ABSTRACT:
A resistor ladder network may be formed with a reduced space on a semiconductor substrate by patterning a plurality of layers of resistive polycrystalline silicon films spaced by insulating layers. Such a device includes a first insulating film formed on a semiconductor substrate, one or more serial-connected first resistors formed in a first polycrystalline silicon film provided on the semiconductor substrate via the first insulating film, a second insulating film provided on the first polycrystalline silicon film, one or more series-connected second resistors formed in a second polycrystalline silicon film provided apart from the first polycrystalline silicon film via the second insulating film, the second polycrystalline silicon film being connected to the first polycrystalline silicon film. A third insulating film is provided over the second polycrystalline silicon film, and metal wires provided on a surface of the second polycrystalline silicon film via contact holes formed in the third insulating film. Preferably, the first polycrystalline silicon film is thicker than the second polycrystalline silicon film, the impurity concentration of the first polycrystalline silicon film is lower than the impurity concentration of the second polycrystalline silicon film, and the grain size of the first polycrystalline silicon film is smaller than that of the second polycrystalline silicon film.
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patent: 5589702 (1996-12-01), Alter
Harada Hirofumi
Kojima Yoshikazu
Osanai Jun
Saitoh Yutaka
Guay John
Seiko Instruments Inc.
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