Semiconductor storage element having a channel region formed of

Details Semiconductor storage element having a channel region formed of Semiconductor storage element having a channel region formed of

1998-05-28

2000-01-11

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 64, 257 66, H01L 2966, H01L 29167, H01L 29207, H01L 29227

Patent

active

060139226

ABSTRACT:
A semiconductor storage element has a source region, a drain region, and a channel region connecting the source region with the drain region, which each are formed on an insulation film of a substrate. A gate insulation film is formed between the channel region and a gate electrode. The source region, the drain region, and the channel region consist of an aggregate of spherical grains which are arranged two-dimensionally on the insulation film and connected with one another such that the adjacent spherical grains are conductive to one another. The channel region contains at least one carrier trap region provided at a location other than an electric path thereof.

REFERENCES:
patent: 4107724 (1978-08-01), Ralph

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