Coating processes – Measuring – testing – or indicating
Patent
1982-10-25
1984-12-11
Smith, John D.
Coating processes
Measuring, testing, or indicating
427 85, 427 53, 427 55, H01L 21316
Patent
active
044877870
ABSTRACT:
Impurity concentration doped in PSG deposited on semiconductor substrates employing chemical vapor deposition process depends on the flow rate of reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the same equipment in one batch at the same time. Regulation of the flow rate of the reactive gases in the neighborhood of the first one of the plural semiconductor substrates processed with the same equipment in one batch at the same time is effective to make the impurity concentration doped in PSG uniform for all the semiconductor substrates processed in one batch employing the presently available sealed tube type equipment for vacuum vapor deposition process. The flow rate regulation is possible by monitoring readings of a manometer which is arranged around the inlets thereof and which was calibrated by the flow rate of a nonreactive gas such as nitrogen gas.
REFERENCES:
patent: 3481781 (1969-12-01), Kern
patent: 4072767 (1978-02-01), Suda et al.
patent: 4098923 (1978-07-01), Alberti et al.
patent: 4100310 (1978-07-01), Ura et al.
Shioya Yoshimi
Takagi Mikio
Fujitsu Limited
Smith John D.
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