Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-09-03
1998-06-02
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257641, 438540, 438601, H01L 2900, H01L 2358
Patent
active
057604533
ABSTRACT:
The structure and method is provided which prevents moisture and contamination from diffusing through openings (e.g., fuse windows) in insulating layers to product devices. Three moisture barrier layers form a moisture impervious boundary system to prevent moisture from diffusing from a fuse window into other overlying layers and into product devices. First and second barrier layers are formed insulation layers below the fuse. A third barrier layer is formed over an uppermost insulation layer, the sidewalls of a fuse window and over the fuse. The first and third barrier layers form a seal in the fuse area. The method comprises forming an insulating layer 52 54 over portions of said substrate 50 including in said fuse window area 63. A first barrier layer 56, a first interlevel dielectric layer 58 are formed over the insulating layer. A second barrier layer 60 is formed over said first interlevel dielectric layer 58. Then a fuse 62 and overlying insulating and conductive layers 66 70 are formed over said fuse 62. Next, a fuse window 73 is formed through said insulating and conductive layers exposing the fuse and the first barrier layer. A third barrier layer 72 is formed over the fuse window, the fuse and the first barrier layer in the fuse window area.
REFERENCES:
patent: 4536949 (1985-08-01), Takayama et al.
patent: 4764800 (1988-08-01), Sander
patent: 5585662 (1996-12-01), Ogawa
patent: 5627400 (1997-05-01), Koga
Ackerman Stephen B.
Saile George O.
Stoffel William J.
Vanguard International Semiconductor Corporation
Wallace Valencia
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